This work reports a monolithic RF front-end module integrating bulk acoustic wave (BAW) filters, Lamb acoustic wave filters, and electronic RF silicon-on-insulator (RFSOI) switches to deliver single-chip multiband RF front-end module (RF-FEM) manufactured on commercial 200mm RF silicon-on-insulator (RFSOI) foundry technology. BAW and Lamb filters built in the same chip and within the same process enable multiband operation. Vertical System-on-Chip (SoC) integration of MEMS and RFSOI components contributes to footprint reduction up to 50%, compared to system-in-package (SiP) modules, and reduces the integration and design complexity of the modules. At its current state of development, this technology is suitable for diversity receive modules (DRX) for 4G/LTE and 5G bands. Extensive characterization results and case studies demonstrate the robustness of the integrated platform. Further productization of this technology will enable the next generation of hundred-filter 5G sub-6GHz RF-FEMs. [2020-0304]

中文翻译：

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用于 5G 移动的单片多频段 MEMS 射频前端模块

这项工作报告了一种集成体声波 (BAW) 滤波器、兰姆声波滤波器和电子射频绝缘体上硅 (RFSOI) 开关的单片射频前端模块，以提供单芯片多频带射频前端模块 (RF- FEM）采用商用 200 毫米射频绝缘体上硅 (RFSOI) 代工技术制造。BAW 和 Lamb 滤波器内置在同一芯片中并在同一工艺中实现多频段操作。与系统级封装 (SiP) 模块相比，MEMS 和 RFSOI 组件的垂直片上系统 (SoC) 集成有助于将占位面积减少多达 50%，并降低模块的集成度和设计复杂性。在目前的发展状态下，该技术适用于 4G/LTE 和 5G 频段的分集接收模块 (DRX)。广泛的表征结果和案例研究证明了集成平台的稳健性。这项技术的进一步产品化将使下一代百滤波器 5G sub-6GHz RF-FEM 成为可能。[2020-0304]