The crystallographic orientation control of GaN nanowires (NWs) has been widely investigated by varying the V–III ratio. Here, we report the tuning of crystallographic orientation of GaN NWs by varying the composition of indium (In) in gallium–gold (Ga–Au) alloy catalyst using metal–organic chemical vapor deposition (MOCVD). The c-plane GaN thin film and sapphire substrate are used as growth templates. We found that the substrates of same orientation have a negligible influence on the orientation of the GaN NWs. The catalyst composition and the dimensions of alloy droplets determine the morphology of the NWs. The density of the NWs was controlled by tuning the droplet size of the alloy catalysts. With the constant V/III ratio, the crystallographic orientation of the GaN NWs was tuned from m- to c-axis by increasing the In composition inside alloy catalyst.

中文翻译：

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In-Ga-Au合金催化剂促进的GaN纳米线生长，着重于团聚温度和组成

GaN纳米线（NWs）的晶体学取向控制已通过改变V-III比进行了广泛研究。在这里，我们报告了通过使用金属有机化学气相沉积（MOCVD）来改变镓-金（Ga-Au）合金催化剂中铟（In）的组成来调整GaN NWs晶体学取向的方法。c面GaN薄膜和蓝宝石衬底用作生长模板。我们发现，相同取向的衬底对GaN NWs的取向影响可忽略不计。催化剂的组成和合金微滴的尺寸决定了纳米线的形貌。通过调节合金催化剂的液滴尺寸来控制NW的密度。在恒定的V / III比的情况下，GaN NW的晶体学取向从m-调整为c增加合金催化剂内部的In组成