Ionic liquid/ionogel gate dielectrics can provide significant advantages for transistor architectures that utilize high surface area semiconductors and/or nonplanar substrates because of their cleanroom-free, liquid-based processability and their inherently large electrostatic double layer capacitance. These attributes of ionogels have already enabled the facile fabrication of several up-and-coming transistor devices geometries for which a highly conformal interface between the electrolyte gate dielectric and the semiconductor is readily achievable, and remote gating with a nonaligned gate electrode is possible. Further, ionogel gating can improve device performance to maximize current densities at low operating voltages. This Perspective highlights three classes of emerging transistor architectures, namely, vertical transistors, surround gate transistors, and thread/fiber-based transistors, and provides several key examples of instances where ionogel gating has either already enabled or still stands to improve device fabrication and performance.

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新兴晶体管架构的离子液体/离子凝胶门控机会

离子液体/离子凝胶栅极电介质可以为利用高表面积半导体和/或非平面衬底的晶体管架构提供显着优势，因为它们无需洁净室、基于液体的可加工性和固有的大静电双层电容。离子凝胶的这些特性已经使几种新兴的晶体管器件几何结构的制造变得容易，其中电解质栅极电介质和半导体之间的高度共形界面很容易实现，并且可以使用未对齐的栅电极进行远程门控。此外，离子凝胶门控可以提高器件性能，以在低工作电压下最大化电流密度。本视角重点介绍了三类新兴晶体管架构，即垂直晶体管、