We report observation of the piezoresistive effect of β-Ga₂O₃ Schottky diodes and investigate its application for strain gauge sensors. The Schottky diode-based strain gauge exhibits resistance on the order of 10⁷ Ω, which allows low power applications. A large gauge factor of −201 ± 43 is measured from a Pt/($\overline{2}$01) β-Ga₂O₃ Schottky diode at room temperature, enabling the strain-induced resistance change to be measurable without a Wheatstone bridge. Mechanical exfoliation in the (100) surface produces β-Ga₂O₃ single crystal thin films, which are more suitable for strain gauge applications than bulk substrates. Owing to the wide bandgap nature, we demonstrate high-temperature operation of strain sensing based on β-Ga₂O₃ Schottky diodes up to 800 K. The β-Ga₂O₃ Schottky diodes simultaneously function as temperature sensors, which may enable temperature compensation of strain gauge output.

中文翻译：

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β-Ga2O3基于肖特基二极管的应变计，具有高电阻，大应变系数和高工作温度

我们报告的β-Ga构成的压阻效应观察₂ ö _3个肖特基二极管和调查其对应变仪传感器的应用程序。的基于肖特基二极管应变仪显示出10的顺序导通电阻⁷  Ω，这允许低功率应用。从Pt /（$\overline{2}$01）的β-Ga ₂ ö ₃肖特基二极管在室温下，使应变诱导电阻变化是可测量的不具有惠斯登电桥。在（100）表面机械剥离产生的β-Ga _2层ö ₃单晶薄膜，这是更适合于比块状衬底应变计的应用程序。由于宽带隙性质，我们证明基于应变感测的高温操作的β-Ga ₂ ö ₃肖特基二极管高达800 K的的β-Ga _2个ö ₃肖特基二极管同时用作温度传感器，其可以使得温度补偿应变仪输出。