We present a new Li source for focused ion beam applications. Based on an AuSi eutectic alloy, Li is added as an impurity to minimize effects from degradation when exposed to air. We show the source is stable over the course of an hour and spot sizes $\lesssim 10$ nm can be achieved. The Li beam can achieve hundreds of nanometer ranges in semiconductors with minimal damage being generated along the path length. The source performance is evaluated through a high-resolution ion beam induced charge collection experiment on an Si-based detector. Further application of the source for ion beam analysis is numerically explored; the example investigated is based on probing a semiconductor heterostructure through a Rutherford backscattering experiment, where the Li beam can reveal information that is inaccessible with either low energy or high energy He projectiles used as probes.

中文翻译：

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锂离子源用于聚焦离子束注入和分析

我们提出了一种用于聚焦离子束应用的新型锂离子源。以AuSi共晶合金为基础，添加Li作为杂质，以最大程度地减少暴露于空气中的降解影响。我们显示源在一个小时的时间内是稳定的，并且斑点大小$\lesssim 10$ 纳米可以实现。Li光束可以在半导体中达到数百纳米的范围，而沿路径长度所产生的损坏却最小。通过在基于Si的探测器上进行高分辨率离子束感应电荷收集实验来评估源性能。在数值上探索了离子源在离子束分析中的进一步应用。所研究的示例基于通过Rutherford反向散射实验探测半导体异质结构，其中Li射束可以揭示低能量或高能量He弹丸作为探针无法访问的信息。