Molecular beam epitaxial (MBE) deposition allows for the epitaxial growth of materials requiring atomically precise control of nanometer thick layers. A key concern with the growth of smaller bandgap materials on larger bandgap substrates via MBE is the radiative coupling of the deposited layer with the heater, which can lead to uncontrolled increases in temperature if not properly accommodated for. In this work, we demonstrate the ability to decouple the radiative component of the heater with the substrate and layer deposition through the incorporation of a molybdenum disilicide coated molybdenum backing plate. We demonstrate that the novel coating allows for highly efficient coupling with the heater while providing improved temperature control at the growth surface, leading to stable growth conditions. We demonstrate the stable growth and film characteristics through the growth of germanium telluride thin films on (100) gallium arsenide substrates.

中文翻译：

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使用二硅化钼涂层的背板控制低带隙材料厚膜的分子束外延生长

分子束外延（MBE）沉积允许需要原子精确控制纳米厚层的材料的外延生长。较小的带隙材料通过MBE在较大的带隙衬底上生长的关键问题是沉积层与加热器的辐射耦合，如果不能适当地容纳，则会导致温度不受控制的升高。在这项工作中，我们展示了通过结合涂有二硅化钼涂层的钼背板来将加热器的辐射分量与基板和层沉积分离的能力。我们证明了新颖的涂层可以与加热器高效耦合，同时在生长表面提供改进的温度控制，从而获得稳定的生长条件。