Silicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failures. In this paper, the two-temperature model (2T-MD) is used to explore the defect recovery process by applying the electronic energy loss (Se) on the pre-damaged system. The effects of defect concentration and the applied electronic energy loss on the defect recovery process are investigated, respectively. The results demonstrate that almost no defect recovery takes place until the defect density in the damage region or the local defect density is large enough, and the probability of defect recovery increases with the defect concentration. Additionally, the results indicate that the defect recovery induced by swift heavy ions is mainly connected with the homogeneous recombination of the carbon defects, while the probability of heterogeneous recombination is mainly dependent on the silicon defects.

碳化硅因其优异的性能而被广泛应用于辐射环境。然而，当不断暴露在强辐射环境中时，会产生大量缺陷，从而导致材料性能下降或失效。在本文中，通过将电子能量损失 (Se) 应用于预损坏系统，使用双温度模型 (2T-MD) 来探索缺陷恢复过程。分别研究了缺陷浓度和施加的电子能量损失对缺陷恢复过程的影响。结果表明，在损伤区域的缺陷密度或局部缺陷密度足够大之前，几乎不会发生缺陷恢复，并且缺陷恢复的概率随着缺陷浓度的增加而增加。此外，