CuI, as a promising hole transport material, possesses high hole mobility and is compatible with perovskite materials about band structure. Herein, CuI hole transport films are first fabricated by vacuum thermal evaporation procedure for n-i-p perovskite solar cell. The results show that vacuum thermal evaporated CuI films have no obvious influence on perovskite underlayer and 200 nm thick CuI film has the best carrier extraction ability. To further improve the stability of the device, reduced graphene oxides are introduced to avoid the accelerated attenuation caused by the reaction of CuI with Au. Finally, the power conversion efficiency of the dual-modified device improves to 8.69%, with the short circuit current density of 18.86 mA cm⁻², the open circuit voltage of 0.832 V and the filling factor of 0.550. The work demonstrates a potential application of vacuum thermal evaporated CuI films in organic-inorganic hybrid perovskite solar cells.

CuI作为有前景的空穴传输材料，具有高的空穴迁移率，并且与钙钛矿材料的带结构相容。在此，CuI空穴传输膜首先通过真空热蒸发过程制造成用于压合钙钛矿太阳能电池。结果表明，真空热蒸发CuI薄膜对钙钛矿底层没有明显影响，而200 nm厚的CuI薄膜具有最佳的载流子提取能力。为了进一步提高器件的稳定性，引入了还原的氧化石墨烯以避免CuI与Au反应引起的加速衰减。最后，双修改型器件的功率转换效率提高到8.69％，短路电流密度为18.86 mA cm ^-2，开路电压为0.832 V，填充系数为0.550。这项工作证明了真空热蒸发CuI膜在有机-无机混合钙钛矿太阳能电池中的潜在应用。