This research article reports the operational characteristics of gate field plate double heterojunction (DH) high electron mobility transistors (HEMTs) using SiN (SiO₂) passivation techniques. The proposed HEMT exhibits 496 (292) V breakdown voltage (V_BR) for L_G (gate-length) = 0.25 μm, L_GD (drain-gate distance) = 3.2 μm and 1 μm field plate length HEMT. The n + GaN source/drain regions with SiN (SiO₂) passivation AlGaN/GaN/AlGaN HEMT delivered 1.4 (1.3) A/mm peak drain current density (I_ds), 540 (550) mS/mm g_m (transconductance), f_T/f_MAX of 54/198 (62/252) GHz, and the sub-threshold drain leakage current of 4 × 10⁻¹³ (1 × 10⁻¹¹) A/mm. The high Johnson figure of merit (JFoM = f_T × V_BR) of 28.76 (19.27) THz.V and excellent V_BR × f_MAX product of 90.27 (73.29) THz.V demonstrates the great potential of the optimized gate field plate DH-HEMTs structure for U and V band high power microwave electronics.

本文研究了使用SiN（SiO ₂）钝化技术的栅场板双异质结（DH）高电子迁移率晶体管（HEMT）的工作特性。对于L _G（栅极长度）= 0.25μm，L _GD（漏极-栅极距离）= 3.2μm和1μm场板长度HEMT ，建议的HEMT表现出496（292）V击穿电压（V _BR）。具有SiN（SiO ₂）钝化AlGaN / GaN / AlGaN HEMT的n + GaN源/漏区提供了1.4（1.3）A / mm的峰值漏极电流密度（I _ds），540（550）mS / mm g _{m m}（跨导） ，f _T / f_最大54/198（62/252）GHz的最大频率，亚阈值漏极泄漏电流为4×10 ^-13（1×10 ^-11）A / mm。约翰逊的高品质因数（JFoM = f _T  ×V _BR）为28.76（19.27）THz.V，优异的V _BR  ×f _MAX乘积为90.27（73.29）THz.V证明了优化的栅极场板DH的巨大潜力-HEMT结构，用于U和V波段大功率微波电子设备。