Ruthenium thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) technology using Ru(EtCp)₂ and oxygen plasma on the modified surface of silicon and SiO₂/Si substrates. The crystal structure, chemical composition, and morphology of films were characterized by grazing incidence XRD (GXRD), secondary ion mass spectrometry (SIMS), and atomic force microscopy (AFM) techniques, respectively. It was found that the mechanism of film growth depends crucially on the substrate temperature. The GXRD and SIMS analysis show that at substrate temperature T = 375 °C, an abrupt change in surface reaction mechanisms occurs, leading to the changing in film composition from RuO₂ at low temperatures to pure Ru film at higher temperatures. It was confirmed by electrical resistivity measurements for Ru-based films. Mechanical stress in the films was also analyzed, and it was suggested that this factor increases the surface roughness of growing Ru films. The lowest surface roughness ~1.5 nm was achieved with a film thickness of 29 nm using SiO₂/Si-substrate for deposition at 375 °C. The measured resistivity of Ru film is 18–19 µOhm·cm (as deposited).

中文翻译：

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Ru（EtCp）2前驱体对钌膜的等离子体增强原子层沉积

使用Ru（EtCp）₂和氧等离子体通过等离子体增强原子层沉积（PEALD）技术在硅和SiO ₂ / Si衬底的改性表面上沉积钌薄膜。膜的晶体结构，化学组成和形貌分别由掠入射XRD（GXRD），二次离子质谱（SIMS）和原子力显微镜（AFM）技术表征。已经发现，膜生长的机理主要取决于衬底温度。GXRD和SIMS分析表明，在底物温度T = 375°C时，表面反应机理会发生突然变化，从而导致薄膜成分从RuO ₂发生变化。在低温下变成纯Ru膜，在更高的温度下。通过Ru基膜的电阻率测量证实了这一点。还分析了膜中的机械应力，并表明该因素增加了生长的Ru膜的表面粗糙度。使用SiO ₂ / Si衬底在375°C下沉积时，膜厚为29 nm时，最低的表面粗糙度约为1.5 nm 。Ru膜的测量电阻率为18–19 µOhm·cm（沉积）。