This paper presents a systematic investigation of high-temperature transport characteristics of a single nanowire Gallium Nitride nanowire field-effect transistor (GaN-NWFET) ranging from room temperature to as high as [Formula: see text]C for the first time. The GaN-NWFET demonstrated a very good on/off current ratio ([Formula: see text] of [Formula: see text] for the p-side and [Formula: see text] for the n-side at room temperature and considerably well at high temperatures. In fact, the device exhibited an on/off current ratio of [Formula: see text] and a transconductance value of [Formula: see text]S for the p-side at [Formula: see text]C indicating a good gating effect even at high temperatures. Additionally, the device exhibited very high mobilities with the hole mobility of [Formula: see text][Formula: see text]cm2/V. s and electron mobility of [Formula: see text] cm2/V. s at room temperature. Furthermore, the device showed very high transconductance values of [Formula: see text]S and [Formula: see text]S at the temperatures of [Formula: see text]C and [Formula: see text]C, respectively. As a consequence, the GaN-NWFET devices could find much use not only in high-power, but also in low-power transistor applications beyond the ambient temperature [Formula: see text]C) of silicon and silicon-on-insulator technologies for electronic and photonic circuits.

中文翻译：

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用于高温电子器件的氮化镓纳米线场效应晶体管 (GaN-NWFET) 的传输特性

本文首次系统研究了单根纳米线氮化镓纳米线场效应晶体管（GaN-NWFET）从室温到高达[公式：见正文]C的高温传输特性。GaN-NWFET 在室温下表现出非常好的开/关电流比（[公式：见文本] 的 p 侧 [公式：见文本] 和 n 侧的 [公式：见文本] 在室温下非常好事实上，该器件在 [公式：见文本]C 处的 p 侧表现出 [公式：见文本] 的开/关电流比和 [公式：见文本]S 的跨导值，表明即使在高温下也具有良好的门控效果。此外，该器件表现出非常高的迁移率，空穴迁移率为 [公式：见正文][公式：见正文]cm2/V。[公式：见正文] cm的s和电子迁移率2/V。s 在室温下。此外，该器件分别在[公式：参见文本]C和[公式：参见文本]C的温度下显示出非常高的[公式：参见文本]S和[公式：参见文本]S的跨导值。因此，GaN-NWFET 器件不仅可用于高功率，还可用于超出环境温度 [公式：见文本]C) 的硅和绝缘体上硅技术的低功率晶体管应用。电子和光子电路。