Most optoelectronic devices share the same basic epitaxial structure – a stack of quantum wells (QWs) sandwiched between p- and n-doped layers. In nitride semiconductors, where holes have 20-times lower mobility than electrons, the holes are able to populate only the topmost 1–2 QWs. The inability to distribute the holes in a large-enough number of QWs is a cause of high Auger recombination in nitride LEDs. Lateral carrier injection is an alternative design, in which the doped regions are situated at the sides of the QW stack and the carriers diffuse horizontally into the QWs. Given that the carriers are injected into all available QWs, it finally makes sense to grow structures with a large number of QWs. We report the results of our computer simulations, which explore the advantages of LCI-based LEDs in terms of energy efficiency.

中文翻译：

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横向载流子注入，用于均匀泵浦InGaN / GaN发光二极管中的多个量子阱

大多数光电器件具有相同的基本外延结构-夹在p-和n之间的一堆量子阱（QW）掺杂层。在氮化物半导体中，空穴的迁移率比电子低20倍，空穴只能填充最上面的1-2 QW。无法在足够多的QW中分布孔是氮化物LED中高俄歇复合的原因。横向载流子注入是一种替代设计，其中掺杂区位于QW堆叠的侧面，载流子水平扩散到QW中。假设将载波注入所有可用的QW中，则最终可以增加具有大量QW的结构。我们报告了计算机仿真的结果，这些仿真探索了基于LCI的LED在能源效率方面的优势。