Compared with systematically investigated resistance switching, nonvolatile multi‐level memristors are highly desired due to their stochastic or analog ability for artificial intelligence. Here, electric‐pulses‐induced responses of 1T‐TaS₂ crystals in hysteresis temperature range are reported. These investigations clearly show that the resistance of the system can be precisely tuned by electric pulses (∼100 V cm⁻¹), forming multiple nonvolatile states in less than 200 ns. The origin of these states and the occurrence of the obstinate triclinic phase activated by pulses are discussed and simulated, implying the rearrangements of the textures composed of commensurate charged‐density‐wave domains separated by discommensurabilities. The multiple nonvolatile resistance states activated conveniently by electric pulses may shed light on the potential applications of artificial synapse devices.

中文翻译：

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在1T-TaS2磁滞温度范围内通过电脉冲调整的多个非易失性电阻状态

与系统研究的电阻切换相比，非易失性多级忆阻器由于其具有人工智能的随机或模拟能力而非常受人们欢迎。在此，报告了在滞后温度范围内电脉冲诱导的1 T- TaS ₂晶体的响应。这些研究清楚地表明，可以通过电脉冲（〜100 V cm ^-1），在不到200 ns的时间内形成多个非易失性状态。讨论并模拟了这些状态的起源以及由脉冲激活的固执三斜相的发生，这暗示了由不相容性分开的相称电荷密度波域组成的纹理的重排。电脉冲方便地激活的多个非易失性电阻状态可能会为人工突触设备的潜在应用提供启发。