By controlling the domain nucleation in ferroelectric mesa‐like cells formed at the surfaces of X‐cut LiNbO₃ single‐crystal films that are integrated with Si substrates, growth of a surface‐bound needle‐like domain is observed in a quarter‐ellipsoidal shape. This domain, which extends in the major polar direction, contracts into several equilibrium segments with unequal lengths after removal of the in‐plane applied electric fields. The curved wall region located near the domain tip that connects the two top nanoelectrodes exhibits 12‐fold magnification of the on‐current when compared with the straight wall region near the tail. The field‐dependent flexible domain length and the high electrical conduction in the tip region promote crossbar integration of high‐density multilevel information‐storing memory devices and selectors with sufficient readout currents, thus enabling data‐intensive applications to be performed using domain wall microelectronics.

中文翻译：

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表面边界域穿透力和大壁电流

通过控制在X切LiNbO ₃表面形成的铁电台面状细胞的畴核化与Si衬底集成在一起的单晶膜，观察到表面结合的针状畴的生长呈四分之一椭圆形。该域在主极性方向上延伸，在去除面内施加的电场后，收缩成长度不等的几个平衡段。与靠近尾部的直壁区域相比，位于连接两个顶部纳米电极的畴尖端附近的弯曲壁区域显示的导通电流放大倍数为12倍。场相关的灵活域长度和尖端区域中的高导电性促进了具有足够读出电流的高密度多级信息存储存储设备和选择器的交叉集成，从而使使用域壁微电子技术进行数据密集型应用成为可能。