Heterojunction terminal technology, especially Si/SiC heterojunction, has been widely used in the power semiconductor device. Si/SiC heterojunction LDMOS combines the advantages of Si and SiC while the breakdown point is transferred due to employing the deep drain region structure to improve the BV of the device. Based on the existing research, a new theory about breakdown point transfer terminal technology is proposed for silicon on silicon carbide lateral double-diffused metal oxide semiconductor field effect transistor with deep drain region based on the electric field modulation in this paper for the first time. A concise and efficient analytical theory is presented to predict the breakdown voltage and electric field (E-field) distributions of Si/SiC LDMOS. The mechanism of surface electric field modulated and optimized by breakdown point transfer terminal technology is explained. Introducing the drain region impact factor into the analytical model to decouple the lateral and vertical depletion below the drift region. The analytical model proves that the deep drain region structure can modulate both the lateral and vertical electric field. Meanwhile, the location of the breakdown point can be determined by the E-field distribution at y = TDr and the E-field distribution at y = TSi, which is demonstrated by both theoretical interpreting and simulation. The derivations were verified using the ISE TCAD with a good agreement in the analytical model by changing the key structural parameters of the device. This analytical theory can be applied to other heterojunction power devices.

异质结端子技术，尤其是Si / SiC异质结，已被广泛用于功率半导体器件中。Si / SiC异质结LDMOS结合了Si和SiC的优点，同时由于采用深漏区结构来改善器件的BV，因此可以传输击穿点。在现有研究的基础上，本文首次基于电场调制技术，提出了一种具有深漏极区的碳化硅硅横向双扩散金属氧化物半导体场效应晶体管击穿点转移终端技术的新理论。提出了一种简洁有效的分析理论来预测Si / SiC LDMOS的击穿电压和电场（电场）分布。阐述了利用击穿点转移终端技术对表面电场进行调制和优化的机理。将漏区影响因子引入分析模型，以使漂移区下方的横向和垂直耗损解耦。分析模型证明，深漏区结构可以同时调制横向电场和垂直电场。同时，击穿点的位置可以由y = TDr处的电场分布和y = TSi处的电场分布确定，这在理论解释和仿真上都得到了证明。通过更改设备的关键结构参数，使用ISE TCAD对推导进行了验证，并且在分析模型中具有很好的一致性。该分析理论可以应用于其他异质结功率器件。