In this work, we reported improved resistive switching (RS) of SnO₂-based resistive random access memory (RRAM) devices according to the post microwave treatment (MWT), working pressures (WP), and the electrode. As a result, as the deposition pressure increased, the operational current of all the devices became commonly lower, and when comparing SnO₂ RRAM devices, the optimal RS characteristics are obtained from the sample with Ag top-electrode deposited at WP of 10 mTorr and after the MWT process. The filament was also investigated, for the sample deposited at 5 mTorr, the diameter of the filament was wider in both the high resistive state and the low resistive state as a result of increasing the number of cycles. As a result, the larger the diameter of the filament, the longer the time for the filament formation and rupture was found.

在这项工作中，我们报告了根据后微波处理（MWT），工作压力（WP）和电极，改进了基于SnO ₂的电阻随机存取存储器（RRAM）器件的电阻切换（RS）。结果，随着沉积压力的增加，所有器件的工作电流通常降低，并且在比较SnO _2时从具有10 mTorr WP沉积的Ag上电极的样品以及MWT工艺之后的RRAM器件中，可以获得最佳的RS特性。还研究了灯丝，对于5 mTorr沉积的样品，由于增加了循环次数，在高电阻状态和低电阻状态下灯丝的直径均较宽。结果，细丝的直径越大，发现细丝形成和破裂的时间越长。