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An improved parasitic resistance extraction strategy alongside the effect of Cds at low gate bias voltages for AlGaN/GaN HEMTs
Engineering Research Express Pub Date : 2021-01-19 , DOI: 10.1088/2631-8695/abd3e6
Pragyey Kumar Kaushik, Sankalp Kumar Singh, Ankur Gupta, Ananjan Basu

An improved parasitic resistance extraction from small-signal equivalent-circuit and effect of C ds in GaN HEMTs is presented. Parasitic capacitances are evaluated at ‘cold pinch off’ condition. More accurate extraction method of parasitic resistance is presented at low gate bias voltages compared to earlier published work. The impact of drain to source capacitance (C ds ) at low gate bias voltage is also reported in this manuscript. The validity of proposed parasitic resistance extraction procedure and effect of drain to source capacitance (C ds ) has been verified through error analysis with the measured S-parameters data of 0.8-μm of AlGaN/GaN high electron mobility transistor consisting 2 200-μm gate width. Proposed method shows good harmony between simulated and measured data up to 40 GHz frequency.



中文翻译:

一种改进的寄生电阻提取策略,以及在低栅极偏置电压下C ds对AlGaN / GaN HEMT的影响

提出了一种改进的小信号等效电路寄生电阻提取方法以及GaN HEMT中C ds的影响。在“冷夹断”条件下评估寄生电容。与较早发表的工作相比,在低栅极偏置电压下提供了更准确的寄生电阻提取方法。该手稿中还报告了在低栅极偏置电压下漏极到源极电容(C ds)的影响。提出寄生电阻提取过程和漏极-源极电容的效果的有效性(C DS)已通过与0.8-的测量的S参数数据错误分析验证μ由2 200-1的AlGaN / GaN高电子迁移率晶体管的米 μ m个栅极宽度。所提出的方法显示了高达40 GHz频率的仿真数据与测量数据之间的良好协调性。

更新日期:2021-01-19
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