Currently, memristor devices suffer from variability between devices and from cycle to cycle. In this work, we study the impact of device variations on memristive Material Implication (IMPLY). New constraints for different parameters and variables are analytically derived and compared to extensive simulation results, covering single gate and 1T1R crossbar structures. We show that a static analysis based on switching conditions is not sufficient for an overall assessment of robustness against device variability. Furthermore, we outline parameter ranges within which the IMPLY gate is predicted to produce correct output values. Our study shows that threshold voltage is the most critical parameter. This work helps scientists and engineers to understand the pitfalls of designing reliable IMPLY-based calculation units better and design them with more ease. Moreover, these analyses can be used to determine whether a certain memristor technology is suitable for implementation of IMPLY-based circuits and systems.

中文翻译：

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忆阻材料含义的器件变异性分析

当前，忆阻器器件遭受器件之间的变化以及周期之间的变化。在这项工作中，我们研究了器件变化对忆阻材料蕴含（IMPLY）的影响。分析得出不同参数和变量的新约束，并将其与广泛的仿真结果进行比较，这些仿真结果涵盖了单门和1T1R交叉开关结构。我们表明，基于开关条件的静态分析不足以对器件可变性的鲁棒性进行整体评估。此外，我们概述了预测IMPLY门将产生正确输出值的参数范围。我们的研究表明，阈值电压是最关键的参数。这项工作可以帮助科学家和工程师更好地了解设计可靠的基于IMPLY的计算单元的陷阱，并使其更容易设计。此外，这些分析可用于确定某种忆阻器技术是否适合实施基于IMPLY的电路和系统。