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Heterostructure of TiO2 and macroporous silicon: The simplest relaxation oscillator
Journal of Science: Advanced Materials and Devices ( IF 7.382 ) Pub Date : 2021-01-19 , DOI: 10.1016/j.jsamd.2021.01.003
Abel Garzon-Roman , Enrique Quiroga-González , Carlos Zúñiga-Islas

A heterostructure composed of TiO2 and macroporous silicon in this study may represent the simplest relaxation oscillator ever reported. It consisted of macroporous Si with TiO2 grown on its pore walls, and metallic contacts. This is also the first relaxation oscillator of its kind. Such oscillators are commonly formed by a capacitor or an inductor and a feedback loop with a switching device operating with a threshold voltage. The dielectric characteristics of TiO2 (capacitive behavior) in combination with the tunnel diode characteristics of the heterostructure (presenting a negative differential resistance, when activated at a threshold voltage) are shown to give rise to the relaxation oscillations.



中文翻译:

TiO 2和大孔硅的异质结构:最简单的弛豫振荡器

在这项研究中,由TiO 2和大孔硅组成的异质结构可能代表了有史以来最简单的弛豫振荡器。它由在其孔壁上生长的具有TiO 2的大孔Si和金属触点组成。这也是同类中的第一个张弛振荡器。这样的振荡器通常由电容器或电感器以及具有以阈值电压操作的开关装置的反馈回路形成。TiO 2的介电特性(电容特性)与异质结构的隧道二极管特性(在阈值电压下激活时呈现负差分电阻)相结合时,会引起弛豫振荡。

更新日期:2021-01-19
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