A simple method for obtaining the charge carrier density of two-dimensional (2D) materials is proposed herein. A formula is suggested for the extraction of the 2D charge carrier density using the horizontal depletion width, which is visually represented by photocurrent mapping methods. An example of this method is demonstrated using a MoS₂ Schottky diode. The results suggest that this method can be useful for a basic analysis of the physical properties of 2D devices.

中文翻译：

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利用二维材料肖特基二极管的光电流图测量载流子密度的新方法

本文提出了一种用于获得二维（2D）材料的电荷载流子密度的简单方法。建议使用水平耗尽宽度提取二维电荷载流子密度的公式，该公式可以通过光电流映射方法直观地表示出来。使用MoS ₂肖特基二极管演示了此方法的示例。结果表明，该方法可用于基本分析2D设备的物理特性。