Low power and multifunctional nonvolatile memories are promising candidates for processing massive data in the Internet of Things era. However, the storage states in conventional memory devices are under the restricted control by electrical or optical signals. Herein, a new multibit tribotronic nonvolatile memory (T-NVM) based on a graphene/hexagonal boron nitride/molybdenum disulfide van der Waals heterostructure and triboelectric nanogenerator (TENG) is proposed. The programming/erasing states can be modulated by the triboelectric potential, which is determined by changing the distance between the two triboelectrification layers. Under the modulation of external mechanical actions, the device exhibits a high on/off ratio of 10⁵ via manipulating mechanical distance from − 0.2 mm to + 0.2 mm, a long retention time up to 6000 s, a stable switching behavior for over 100 cycles, and a multilevel data storage capability of 14 stages by different external stimuli. Furthermore, a memory inverter circuit employing the triboelectric potential as input signals can serve as the conversion of logical signals. This work proves the great potential of tribotronic devices for direct interaction with external environment in lower power and broadening diverse applications of human-robot interactions, self-powered wearable devices, and intelligent instrumentation.

低功耗和多功能非易失性存储器是物联网时代处理海量数据的有希望的候选者。然而，常规存储设备中的存储状态受电或光信号的限制。本文提出了一种新的基于石墨烯/六方氮化硼/二硫化钼范德华异质结构和摩擦电纳米发电机（TENG）的多位摩擦电子非易失性存储器（T-NVM）。可以通过摩擦电势来调制编程/擦除状态，该摩擦电势是通过改变两个摩擦电化层之间的距离来确定的。在外部机械作用的调节下，该设备的开/关比高达10 ⁵通过控制从-0.2 mm到+ 0.2 mm的机械距离，长达6000 s的长保持时间，超过100个周期的稳定开关行为以及通过不同外部刺激的14级多级数据存储能力。此外，采用摩擦电位作为输入信号的存储器反相器电路可以用作逻辑信号的转换。这项工作证明了摩擦电子设备在低功率下与外部环境直接交互以及扩大人机交互，自供电可穿戴设备和智能仪器的各种应用的巨大潜力。