Sol-gel processed SnO₂ thin-film transistors (TFTs) were fabricated on SiO₂/p₊ Si substrates. The SnO₂ active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO₂ active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (V_th), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO₂ TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm²/Vs, an SS of 1.99, an I_on/I_off value of ~4.0 × 10⁷, and showed enhancement mode operation and positive V_th, equal to 9.83 V.

中文翻译：

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有源沟道层厚度对SnO2薄膜晶体管性能的影响

在SiO ₂ / p ₊ Si衬底上制备了经溶胶凝胶处理的SnO ₂薄膜晶体管（TFT）。通过溶胶-凝胶旋涂法沉积SnO ₂有源沟道层。前体浓度影响膜的厚度和表面粗糙度。随着前体浓度的增加，沉积的膜更厚更光滑。器件性能受SnO ₂有源沟道层的厚度和粗糙度影响。前驱物浓度的降低导致制造的器件具有较低的场效应迁移率，较大的亚阈值摆幅（SS）和增大的阈值电压（V _th），这是由于较低的自由载流子浓度和陷阱位点的增加所致。所制造的SnO _2层的TFT，具有优化0.030中号的前体，具有9.38厘米的场效应迁移率² / Vs时，一个SS的1.99，一个我_上/我_关值〜4.0×10 ⁷，并显示出增强模式操作正V _th等于9.83 V