In this letter we present a fast triple voltage quenching circuit (TVQC) with an integrated $40~\mu \text{m}$ diameter single-photon avalanche diode (SPAD) in 0.35- $\mu \text{m}$ CMOS. By pre-biasing the switching MOSFETs the reaction time of the TVQC is kept small, leading to a total quenching time of only 1.4 ns of which 0.61 ns are actively quenched. This short reaction time reduces the avalanche charge and therefore also the afterpulsing probability (APP). The dead time is adjustable from 7.9 ns to 200 ns, which allows further reducing the APP. Experimental verification shows an APP of 2.1% at a dead time of 30 ns. Using an integrated SPAD with a thick absorption zone allows achieving a photon detection probability (PDP) of 28.8% at 850 nm, while showing a peak PDP of 53.1% at 657 nm, both at 9.9 V excess bias.

中文翻译：

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用于增加 PDP 的集成快速感应三倍电压 SPAD 淬灭/复位电路

在这封信中，我们介绍了一种具有集成的快速三重电压猝灭电路 (TVQC) $40~\mu \text{m}$ 直径为 0.35- 的单光子雪崩二极管 (SPAD) $\mu \text{m}$ CMOS。通过对开关 MOSFET 进行预偏置，TVQC 的反应时间保持很小，从而导致总猝灭时间仅为 1.4 ns，其中 0.61 ns 被主动猝灭。这种短反应时间减少了雪崩电荷，因此也减少了后脉冲概率 (APP)。死区时间可在 7.9 ns 至 200 ns 范围内调节，从而进一步降低 APP。实验验证表明，在 30 ns 的死区时间 APP 为 2.1%。使用具有厚吸收区的集成 SPAD 可以在 850 nm 处实现 28.8% 的光子检测概率 (PDP)，同时在 657 nm 处显示出 53.1% 的峰值 PDP，均在 9.9 V 过偏压下。