We investigate fluorescent defect centers in 4H silicon carbide p–n junction diodes fabricated via aluminum-ion implantation into an n-type bulk substrate without the use of an epitaxial growth process. At room temperature, electron-irradiated p–n junction diodes exhibit electroluminescence originating from silicon-vacancy defects. For a diode exposed to an electron dose of \(1 \times 10^{18}\,{{\mathrm{cm}}}^{-2}\) at \(800\,{{\mathrm{keV}}}\), the electroluminescence intensity of these defects is most prominent within a wavelength range of 400–\(1100\,{{\mathrm{nm}}}\). The commonly observed \({{\mathrm{D}}}_1\) emission was sufficiently suppressed in the electroluminescence spectra of all the fabricated diodes, while it was detected in the photoluminescence measurements. The photoluminescence spectra also displayed emission lines from silicon-vacancy defects.

我们调查了在不使用外延生长过程的情况下，通过将铝离子注入n型块状衬底制成的4H碳化硅p–n结二极管中的荧光缺陷中心。在室温下，电子辐照的p–n结二极管会显示出由于硅空位缺陷引起的电致发光。对于暴露于\（800 \，{{\ mathrm {keV}}电子剂量为\（1×10 ^ {18} \，{{\ mathrm {cm}}} ^ {-2} \）的二极管}} \），这些缺陷的电致发光强度在400 – \（1100 \，{{\ mathrm {nm}}} \\）的波长范围内最为突出。常见的\（{{\ mathrm {D}}} _ 1 \）在所有制造的二极管的电致发光光谱中都充分抑制了发射，而在光致发光测量中检测到了。光致发光光谱还显示了来自硅空位缺陷的发射线。