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Hybrid Memory Device (Memory/Selector) with Scalable and Simple Structure for XNOR‐Based Neural Network Applications
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2021-01-15 , DOI: 10.1002/aelm.202000881
Changhyuck Sung 1 , Seong Hun Kim 2 , Myounghoon Kwak 1 , Donghwa Lee 2 , Hyunsang Hwang 1
Affiliation  

This study investigates the electrical behavior of a hybrid memory device with both memory and selector characteristics. Electrical measurements and simulations indicate that the electrical behaviors (nonvolatile characteristics in Al2O3 layers and volatile characteristics in TiO2 layers) are linked to the stability of the conductive filament (CF) used. The binding energy between the Ag atoms in the CF is crucial for achieving nonvolatile or volatile characteristics. Thus, the hybrid memory device exhibits tunable threshold‐voltage characteristics and a consistent off‐state without requiring an additional selector device. Furthermore, the buffer metal layer between the active electrode and oxide layer affects the filament‐formation process in terms of the switching time. Experimental results show that the buffer layer significantly affects ion motion, such as redox reactions and ion migration. Thus, hybrid memory devices with a Zr buffer layer can solve the voltage–time dilemma, enabling fast and low‐voltage switching. Robust XNOR‐based neural network applications are developed using hybrid memory devices in a cross‐point array with characteristics such as scalability, simple structure, and excellent switching characteristics. By carefully considering the on–off ratio and device variability, hybrid memory devices can ensure reliable operation with a high pattern recognition accuracy in XNOR‐based neural neuromorphic hardware systems.

中文翻译:

具有可扩展且结构简单的混合存储设备(存储器/选择器),用于基于XNOR的神经网络应用

这项研究调查了具有存储和选择器特性的混合存储设备的电性能。电学测量和模拟表明,电学行为(Al 2 O 3层中的非挥发性特性和TiO 2中的非挥发性特性层与所使用的导电丝(CF)的稳定性有关。CF中Ag原子之间的结合能对于实现非易失性或挥发性特性至关重要。因此,混合存储器件具有可调的阈值电压特性和一致的断态,而无需额外的选择器器件。此外,活性电极和氧化物层之间的缓冲金属层会影响开关时间的长丝形成过程。实验结果表明,缓冲层会显着影响离子运动,例如氧化还原反应和离子迁移。因此,具有Zr缓冲层的混合存储器件可以解决电压-时间难题,从而实现快速和低压切换。基于交叉点阵列的混合存储设备具有强大的基于XNOR的神经网络应用程序,这些应用程序具有可伸缩性,结构简单和出色的开关特性等特性。通过仔细考虑开关比率和设备可变性,混合存储设备可以在基于XNOR的神经神经形态硬件系统中以高模式识别精度确保可靠的操作。
更新日期:2021-03-11
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