To explore the diluted magnetic semiconductors for spintronic applications we have studied N doped Y₂O₃ employing density functional theory (DFT). It has been observed that the non-magnetic pristine Y₂O₃ attains 1.0 _µB magnetic moment for each defect for single N impurity and the induced ferromagnetic coupling range is sufficient to withstand room temperature ferromagnetism as estimated Curie temperature is 791 K. The partial density of states reveals that it is the N-2p orbital along with nearest Y-4d orbital which mainly contributes to induced magnetism. Moreover, the computed relative formation energy indicates that O substitute defect is synthetically more appreciative and dominant over interstitial defect. The charged defect analysis also predicts that the system remains ferromagnetic even with most probable charge defect state. All these supporting outcomes stipulate that N doped Y₂O₃ could be customised as a diluted magnetic semiconductor which could be fruitfully applied as a spintronic device.

为了探索用于自旋电子学的稀释磁性半导体，我们使用密度泛函理论（DFT）研究了N掺杂的Y ₂ O ₃。已经观察到非磁性原始Y ₂ O ₃达到1.0 _µB对于单个N杂质，每个缺陷的磁矩和感应的铁磁耦合范围足以承受室温铁磁，因为居里温度估计为791K。部分偏态密度显示它是N-2p轨道以及最近的Y-4d主要有助于感应磁的轨道。此外，计算出的相对形成能表明，O替代缺陷在合成上比间隙缺陷更具鉴赏力和优势。带电缺陷分析还预测，即使具有最可能的带电缺陷状态，系统仍保持铁磁性。所有这些支持性结果都规定了N掺杂的Y ₂ O ₃ 可以定制为稀释的磁性半导体，可以有效地用作自旋电子器件。