Core-shell Bi₂SiO₅ nanosystem with uniform morphology and narrow size distribution has been successfully synthesized via a facile template-assisted route. With the introduction of Eu³⁺, detailed studies are performed to evaluate its promise as Eu³⁺-based phosphor host. The yielded Bi₂SiO₅:Eu³⁺ nanospheres are proven to be pure tetragonal phase via X-ray diffraction and Rietveld refinement. Moreover, the phosphor particles consist of monodisperse spheres with an average diameter of approximately 285 nm by high-resolution electron microscopy. When excited by near-ultraviolet (NUV) light, the abnormally high-intensity emission at 703 nm arising from the ⁵D₀→⁷F₄ transition of Eu³⁺ is observed. The temperature-dependent photoluminescence spectra show that the optimized Bi₂SiO₅:20%Eu³⁺ have satisfactory thermal stability with 63.7% of emission intensity at 423 K relative to 303 K. The deep-red light-emitting diode (LED) device fabricated by coating NUV chip with the Bi₂SiO₅:20%Eu³⁺ phosphors is demonstrated. The newly-developed Bi₂SiO₅:Eu³⁺ nanophosphors display commendable photoluminescence properties, demonstrating their promise as deep-red phosphor candidates for use in phosphor-converted LEDs.

中文翻译：

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⁵ D ₀ → ⁷ F ₄跃迁的Bi ₂ SiO ₅：Eu ³⁺核壳纳米球的合成与光致发光特性

通过简便的模板辅助途径成功合成了形貌均匀，粒径分布窄的核壳型Bi ₂ SiO ₅纳米系统。随着Eu ³⁺的引入，进行了详细的研究以评估其作为基于Eu ³⁺的磷光体宿主的前景。通过X射线衍射和Rietveld精制证明了所得的Bi ₂ SiO ₅：Eu ³⁺纳米球为纯正四方相。此外，通过高分辨率电子显微镜，磷光体颗粒由平均直径约为285nm的单分散球体组成。当被近紫外（NUV）光激发时，由703nm引起的703 nm处的异常高强度发射观察到Eu ^3+的5 D ₀ → ⁷ F ₄转变。与温度有关的光致发光光谱表明，优化后的Bi ₂ SiO ₅：20％Eu ³⁺具有令人满意的热稳定性，在423 K处的发射强度为303 K，具有63.7％的发射强度。深红色发光二极管（LED）器件展示了通过用Bi ₂ SiO ₅：20％Eu ³⁺荧光粉涂覆NUV芯片制备的方法。新开发的Bi ₂ SiO ₅：Eu ³⁺ 纳米磷光体显示出值得称赞的光致发光特性，证明了它们作为用于磷光体转换的LED的深红色磷光体候选物的前景。