The influence of epitaxial strain on the electronic structure of α-Cr₂O₃(0001) thin films is probed by combining X-ray photoemission spectroscopy and crystal field multiplet calculations. In-plane lattice strain introduces distortions in the CrO₆ octahedron and splits the 3d orbital triplet t_2g into a₁ + e orbitals. For relaxed thin films, the lines-shape of the Cr 2p core levels are well reproduced when the t_2g subset is fully degenerated. In-plane tensile strain stabilizes a₁ with respect to e orbitals, whereas compressive strain destabilizes a₁ orbitals. Understanding these crystal field variations is essential for tuning the physical properties of α-Cr₂O₃ thin films.

外延应变对α-Cr的电子结构的影响₂ ö ₃（0001）薄膜通过组合X射线光电子能谱和晶体场多重峰计算探测。面内的的CrO晶格应变介绍扭曲₆八面体和拆分的3d轨道三重吨_2克 成一个_1个 +  Ë轨道。对于松弛薄膜，当t _2g子集完全退化时，可以很好地再现Cr 2 p核心能级的线形。面内拉伸应变相对于e稳定为₁ 轨道，而压缩应变不稳定一个_1个 轨道。了解这些晶体场的变化是用于调谐α-Cr的物理性能必不可少₂ ö ₃薄膜。