Non Ionizing Energy Loss (NIEL) is the metric conventionally used to scale displacement damage degradation of irradiated semiconductor materials. Degradation of many electrical parameters is scaled according to this average parameter. But some deviations from NIEL scaling approach are observed from time to time. The stochastic nature of irradiation is often ignored. But, the degradation is not necessarily proportional to the average degradation level given by NIEL. The scatter of the irradiation degradation level is studied in this paper. This analysis provides some hints in order to interpret some discrepancies observed between measurements and predictions made with NIEL. Reliability of NIEL scaling method, applied to dark current degradation, is discussed for Silicon and Gallium Arsenide optoelectronic devices.

非电离能量损失（NIEL）是通常用于衡量辐照半导体材料的位移损伤退化的度量。根据该平均参数来缩放许多电参数的降级。但是，有时会发现与NIEL缩放方法存在一些偏差。辐射的随机性通常被忽略。但是，退化不一定与NIEL给出的平均退化水平成正比。本文研究了辐射降解水平的散射。该分析提供了一些提示，以解释在使用NIEL进行的测量和预测之间观察到的某些差异。针对硅和砷化镓光电器件，讨论了应用于暗电流退化的NIEL缩放方法的可靠性。