Abstract

The results of studying the conditions for obtaining an atomically smooth surface of GaSb substrates are presented for the first time. It has been shown experimentally that it is possible to improve the surface quality of the samples by changing the annealing conditions. The smallest roughness of 1.3 nm was obtained for an annealing time of 16 min at a temperature of 650°C in a flow of trimethylantimony and H₂.

中文翻译：

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平滑锑化镓表面

摘要

首次给出了研究获得GaSb衬底原子光滑表面的条件的结果。实验表明，通过改变退火条件可以改善样品的表面质量。在三甲基锑和H ₂的流动中，在650°C的温度下经过16分钟的退火时间，获得的最小粗糙度为1.3 nm 。