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A 61.2-dBΩ, 100 Gb/s Ultra-Low Noise Graphene TIA over D-Band Performance for 5G Optical Front-End Receiver
Journal of Infrared Millimeter and Terahertz Waves ( IF 2.9 ) Pub Date : 2021-01-14 , DOI: 10.1007/s10762-021-00771-0
Pradeep Gorre , R. Vignesh , Hanjung Song , Sandeep Kumar

This work reports in first time a 100-Gb/s, ultra-low noise, variable gain multi-stagger tuned transimpedance amplifier (VGMST-TIA) over the D-band performance. The whole work is binding into two phases. The first phase involves the modeling and characterization of graphene field-effect transistor (GFET) with an optimized transition frequency of operation. While in the second phase, a TIA design employs a T-shaped symmetrical L-R network at the input, which mitigates the effect of photo diode capacitance and achieves a D-band of operation. The proposed work uses a VGMST to establish TIA, which realizes optimum noise performance. The high gain 3-stage VGMST-TIA effectively minimizes the white noise and illustrates a sharp out-of-band roll-off to achieve considerable noise reduction at high frequencies. The active feedback mechanism controls the transimpedance gain by tuning the control voltage which results better group delay. Besides, an L-C circuit is employed at the output to enhance bandwidth. The full TIA is implemented and fabricated using a commercial nano-manufacturing 9-nm graphene film FET on a silicon wafer using 0.065-μm process. The TIA achieves a flat transimpedance gain of 61.2 dBΩ with ± 9 ps group delay variation over the entire bandwidth. The proposed TIA measured an impedance bandwidth of 0.2 THz with ultra-low input-referred noise current density of 2.03 pA/√Hz. The TIA supports a 100-Gb/s data transmission due to large bandwidth; therefore, a bit-error-rate (BER) less than 10−12 is achieved. The chip occupies an area of 0.92 * 1.34 mm2 while consuming power of 21 mW under supply of 1.8 V.



中文翻译:

适用于5G光学前端接收器的D波段性能达到61.2dBΩ,100 Gb / s超低噪声石墨烯TIA

这项工作首次报告了D频段性能达到100 Gb / s的超低噪声,可变增益多交错调谐互阻放大器(VGMST-TIA)。整个工作分为两个阶段。第一阶段涉及对石墨烯场效应晶体管(GFET)进行建模和表征,并具有最佳的工作转换频率。在第二阶段,TIA设计在输入端采用T形对称LR网络,从而减轻了光电二极管电容的影响并实现了D波段工作。拟议的工作使用VGMST来建立TIA,从而实现最佳的噪声性能。高增益三级VGMST-TIA有效地减小了白噪声,并说明了带外急剧下降,从而在高频下可实现相当大的噪声降低。有源反馈机制通过调整控制电压来控制跨阻增益,从而获得更好的群延迟。此外,在输出端采用LC电路以增加带宽。完整的TIA是使用商业纳米制造的9-nm石墨烯薄膜FET在0.065-μm工艺在硅晶片上实现和制造的。TIA在整个带宽上具有±9 ps的群延迟变化,实现了61.2dBΩ的平坦互阻增益。拟议的TIA测量了0.2 THz的阻抗带宽,输入参考噪声电流密度超低,为2.03 pA /√Hz。由于带宽大,TIA支持100 Gb / s的数据传输;因此,误码率(BER)小于10 完整的TIA是使用商业纳米制造的9-nm石墨烯薄膜FET在0.065-μm工艺在硅晶片上实现和制造的。TIA在整个带宽上具有±9 ps的群延迟变化,实现了61.2dBΩ的平坦互阻增益。拟议的TIA测量了0.2 THz的阻抗带宽,输入参考噪声电流密度超低,为2.03 pA /√Hz。由于带宽大,TIA支持100 Gb / s的数据传输;因此,误码率(BER)小于10 完整的TIA是使用商业纳米制造的9-nm石墨烯薄膜FET在0.065-μm工艺在硅晶片上实现和制造的。TIA在整个带宽上具有±9 ps的群延迟变化,实现了61.2dBΩ的平坦互阻增益。拟议的TIA测量了0.2 THz的阻抗带宽,输入参考噪声电流密度超低,为2.03 pA /√Hz。由于带宽大,TIA支持100 Gb / s的数据传输;因此,误码率(BER)小于10 2 THz,具有超低输入参考噪声电流密度,为2.03 pA /√Hz。由于带宽大,TIA支持100 Gb / s的数据传输;因此,误码率(BER)小于10 2 THz,具有超低输入参考噪声电流密度,为2.03 pA /√Hz。由于带宽大,TIA支持100 Gb / s的数据传输;因此,误码率(BER)小于10达到-12。该芯片占用0.92 * 1.34 mm 2的面积,而在1.8 V电源下消耗21 mW的功率。

更新日期:2021-01-14
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