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Defect reduction and dopant activation of in situ phosphorus-doped silicon on a (111) silicon substrate using nanosecond laser annealing
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-01-13 , DOI: 10.35848/1882-0786/abd718
Hyunsu Shin 1 , Juhee Lee 1, 2 , Eunjung Ko 1, 2 , Eunha Kim 3 , Dae-Hong Ko 1
Affiliation  

In situ phosphorus-doped silicon (ISPD) has been actively investigated as a source/drain material. However, defect formation during the epitaxial growth of ISPD layers in 3D structures deteriorate the device performance. In this study, we investigate the elimination of inherent defects in ISPD layers using nanosecond laser annealing (NLA). High-density twin- and stacking-fault defects in the ISPD layers cause strain relaxation and dopant deactivation. The NLA process dramatically reduces or eliminates the defects, consequently generating the strain and electrically activating the incorporated phosphorous. The ISPD epitaxial growth and subsequent NLA processes will be robust methods for the fabrication of advanced 3D devices.



中文翻译:

使用纳秒激光退火在(111)硅衬底上原位磷掺杂硅的缺陷减少和掺杂剂活化

原位掺杂磷的硅(ISPD)已作为源/漏材料得到了积极研究。然而,在3D结构中ISPD层的外延生长期间的缺陷形成使器件性能恶化。在这项研究中,我们研究使用纳秒激光退火(NLA)消除ISPD层中的固有缺陷。ISPD层中的高密度双断层和堆叠断层缺陷会导致应变松弛和掺杂物失活。NLA工艺大大减少或消除了缺陷,从而产生了应变并电激活了掺入的磷。ISPD外延生长和后续的NLA工艺将成为制造高级3D器件的可靠方法。

更新日期:2021-01-13
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