We report on high-quality high-throughput laser milling of silicon with a sub-ps laser delivering more than 1 kW of average laser power on the workpiece. In order to avoid heat accumulation effects, the processing strategy for high-quality laser milling was adapted to the available average power by using five-pulse bursts, a large beam diameter of 372 µm to limit the peak fluence per pulse to approximately ${0.7}\;{{{\rm J}/{\rm cm}}^2}$, and a high feed rate of 24 m/s. As a result, smooth surfaces with a low roughness of ${{ S }_a}\le 0.6\;{\unicode{x00B5}{\rm m}}$ were achieved up to the investigated milling depth of 313 µm while maintaining a high material removal rate of ${230}\;{{\rm mm}^3}/{\min}$.

中文翻译：

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使用1 kW亚皮秒激光的高质量高通量硅激光铣削

我们报道了用亚ps激光对硅进行高质量，高通量的激光铣削，可在工件上提供超过1 kW的平均激光功率。为了避免热量积聚效应，高质量的激光铣削加工策略通过使用五脉冲猝发来适应可用的平均功率，该脉冲的大光束直径为372 µm，以将每个脉冲的峰值注量限制在大约$ {0.7 } \; {{{\ rm J} / {\ rm cm}} ^ 2} $，高进给速度为24 m / s。结果，获得了低粗糙度$ {{S _a} \ le 0.6 \; {\ unicode {x00B5} {\ rm m}} $$的光滑表面，直至所研究的铣削深度为313 µm。$ {230} \; {{\ rm mm} ^ 3} / {\ min} $的高材料去除率。