Physical Review Letters ( IF 8.385 ) Pub Date : 2021-01-13 , DOI: 10.1103/physrevlett.126.027401
D. O. Demchenko; M. Vorobiov; O. Andrieiev; T. H. Myers; M. A. Reshchikov

Currently, only one shallow acceptor (Mg) has been discovered in GaN. Here, using photoluminescence (PL) measurements combined with hybrid density functional theory, we demonstrate that a shallow effective-mass state also exists for the ${\mathrm{Be}}_{\mathrm{Ga}}$ acceptor. A PL band with a maximum at 3.38 eV reveals a shallow ${\mathrm{Be}}_{\mathrm{Ga}}$ acceptor level at $113±5\text{\hspace{0.17em}}\text{\hspace{0.17em}}\mathrm{meV}$ above the valence band, which is the lowest value among any dopants in GaN reported to date. Calculations suggest that the ${\mathrm{Be}}_{\mathrm{Ga}}$ is a dual-nature acceptor with the “bright” shallow state responsible for the 3.38 eV PL band, and the “dark,” strongly localized small polaronic state with a significantly lower hole capture efficiency.

GaN中铍受体的浅和深状态：为什么光致发光实验不能揭示半导体中缺陷的小极化子

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