In this study, the Quad gate with gate oxide stack for 3 fins which is a vertically stacked device for the classical model and added the quantum mechanical effects to classical refers to the quantum model and both models have been explored for its analog performance. The analog and RF parameters for device performance like trans-conductance (gm), output conductance (gd), intrinsic gain (Av), and cut-off frequency (ft) are evaluated using a Visual TCAD tool. The simulation result reveals that a capacitance value for classical and quantum model (in the order of 10−19) which minimizes ON state delay and making the device suitable for fast switching applications. The AC analysis of the device demonstrates quite a high cut off frequency of 0.167 THz for classical model and 6.6 THz for Quantum model and a remarkable trans-conductance (Gm) of 23 µS. Furthermore, the P-type device response of the same has been studied extensively.

在这项研究中，具有3个鳍的栅氧化物叠层的四极栅是经典模型的垂直堆叠器件，并在经典模型中添加了量子力学效应，即量子模型，并且已经针对这两种模型的模拟性能进行了研究。使用Visual TCAD工具评估器件性能的模拟和RF参数，例如跨导（gm），输出电导（gd），固有增益（Av）和截止频率（ft）。仿真结果表明，经典模型和量子模型的电容值（约为10-19）最大程度地减小了导通状态延迟，并使该器件适合于快速开关应用。器件的交流电分析表明，经典模型的截止频率很高，量子模型的截止频率为0.167 THz，量子模型的截止频率为6.6 THz，跨导（Gm）高达23 µS。