Herein, an optimized process flow of near‐surface quantum well metal–oxide–semiconductor field‐effect transistors (MOSFETs) based on planar layers of metalorganic vapor‐phase epitaxy (MOVPE) grown In_xGa_1−xAs is presented. It is found that by an optimized pre‐growth cleaning and post‐metal anneal, the quality of the MOS structure can be greatly enhanced. This optimization is a first step toward realization of a scalable platform for topological qubits based on a well‐defined network of lateral In_xGa_1−xAs nanowires grown by selective area growth.

中文翻译：

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近表面量子阱工艺的优化

本文介绍了基于生长在_x Ga _{1- x} As中的金属有机气相外延（MOVPE）平面层的近表面量子阱金属氧化物半导体场效应晶体管（MOSFET）的优化工艺流程。发现通过优化的生长前清洁和金属后退火，可以大大提高MOS结构的质量。此优化是基于通过选择性区域生长而生长的横向In _x Ga _{1- x} As纳米线的明确定义的网络，实现可扩展拓扑量子位平台的第一步。