Flexible InGaZnO thin‐film transistors (TFTs) have been extensively investigated over the last decade with an aim to transferring electronic devices from rigid substrates to light‐weight, soft and flexible ones. Firstly, an introduction to flexible InGaZnO TFT is provided, where the superiority over its rigid counterparts is illustrated. Then, the TFT structures are exhibited with their primary film layers, and the material choice and process selection are presented for each layer to explain the fabrication of flexible InGaZnO TFTs with high performance. Afterward, the recent advances on the electrical performance of the flexible InGaZnO TFTs achieved by either material optimization or structure innovation are summarized, and their operating principles and improvement mechanisms are clarified. Next, the recent progresses on the mechanical flexibility of flexible InGaZnO TFTs are presented according to improvement methods. All these improvements enable the flexible InGaZnO TFTs to endure smaller bending radius and more bending cycles even under electrical and illumination stresses. In particular, the mechanisms concerning mechanical bending are demonstrated in detail, which successfully explain the bending‐induced instability in electrical characteristics of flexible InGaZnO TFTs in numerous studies. Finally, the challenges in this area are summarized as guidance for future research.

中文翻译：

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柔性InGaZnO薄膜晶体管的最新进展

在过去的十年中，对柔性InGaZnO薄膜晶体管（TFT）进行了广泛的研究，目的是将电子设备从刚性基板转移到轻质，柔软和柔性的基板上。首先，提供了对柔性InGaZnO TFT的介绍，并在其中说明了其在刚性InGaZnO TFT上的优越性。然后，以其主要的薄膜层展示TFT结构，并为每一层提供材料选择和工艺选择，以解释具有高性能的柔性InGaZnO TFT的制造。随后，总结了通过材料优化或结构创新在柔性InGaZnO TFT的电性能方面取得的最新进展，并阐明了其工作原理和改进机制。下一个，根据改进方法，介绍了柔性InGaZnO TFTs在机械柔韧性方面的最新进展。所有这些改进使柔性InGaZnO TFT甚至在电和光照应力下也能承受更小的弯曲半径和更大的弯曲周期。特别是，详细说明了有关机械弯曲的机制，这些机制在众多研究中成功地解释了弯曲诱导的InGaZnO TFT柔性电特性的不稳定性。最后，总结了该领域的挑战，为将来的研究提供了指导。详细说明了有关机械弯曲的机理，在许多研究中成功地解释了弯曲诱导的InGaZnO TFT柔性电特性的不稳定性。最后，总结了该领域的挑战，为将来的研究提供了指导。详细说明了有关机械弯曲的机理，在许多研究中成功地解释了弯曲诱导的InGaZnO TFT柔性电特性的不稳定性。最后，总结了该领域的挑战，为将来的研究提供了指导。