Nanoelectromechanical (NEM) device has been regarded as one of the future switching devices due to its nearly infinite switching slope and zero off-state leakage current. However, it suffers from high pull-in voltage which causes high operation voltage. In this study , a sub-15 nm-thick Al-doped HfO₂-based ferroelectric (FE) layer with a negative capacitance (NC) that can exceed the scalability limitation of the perovskite materials is used for voltage amplification to solve the issue. In detail, the model parameters are extracted from the separately fabricated devices; the capacitor of FE material and the NEM device. Using the parameters, the influences of NC on the NEM device are theoretically examined. In addition, systems with other dopants in HfO₂-based FE material are compared. Finally, the design parameters are optimized for a low-power FE-NEM system.

纳米机电（NEM）器件因其几乎无限的开关斜率和零关态漏电流而被视为未来的开关器件之一。然而，它具有高的引入电压，这会导致高的工作电压。在这项研究中，具有负电容（NC）的亚15纳米厚Al掺杂HfO ₂基铁电（FE）层可以超过钙钛矿材料的可扩展性极限，用于电压放大以解决该问题。详细来说，模型参数是从单独制造的设备中提取的；FE材料的电容器和NEM器件。使用这些参数，从理论上研究了NC对NEM设备的影响。此外，在HfO _2中具有其他掺杂剂的系统比较了基于FE的材料。最后，针对低功率FE-NEM系统优化了设计参数。