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Experimental study of neutron irradiation effect on elementary semiconductor devices using Am-Be neutron source
Indian Journal of Pure & Applied Physics ( IF 0.7 ) Pub Date : 2021-01-12
H L Swami, Rajat Rathod, T Srinivas Rao, M Abhangi, S Vala, C Danani, P Chaudhuri, R Srinivasan

An experiment has been conducted to evaluate the lifetime, reliability and operational performance of elementary semiconductor devices in the neutron radiation environment which supports to reduce the fatal in measurements and plan the preventive actions in nuclear facilities. It will also support the enhancement of electronics for nuclear facilities. The elementary semiconductor devices used in the experiment are Diode (1n4007), Zener Diode (5.1v), Light Emitting Diode, Transistor (BC547, 2n3904), Voltage controlling IC (7805), Operational Amplifier (LM741) and Optocoupler (4n35). The selection of devices has been made by keeping in mind their application in transmitting devices (i.e. Temperature transmitter, pressure transmitter, flow transmitter, monitors and controllers) for Indian test blanket system in ITER. Such devices are also used in general nuclear electronics. The devices have been irradiated in the Am-Be neutron source environment. The maximum fluence has been given up to 1011 n/cm2. The neutron source has energy range from low to high. All semiconductor devices have been characterized before and after irradiations. The deviation of 5 - 10% is observed in diodes I-V characteristics whereas transistors show a bit higher deflection in basic functionality. Optocoupler shows more than 50% deviation in its basic characteristics whereas voltage-controlling IC is not even functioning after the irradiation of 1011 n/cm2. The paper describes the details of the experiment and the behavior of semiconductor devices after irradiation. The experiment supports the selection and further research of the Indian test blanket system instruments.

中文翻译:

Am-Be中子源对中子辐照对基本半导体器件影响的实验研究

已经进行了一项实验,以评估中子辐射环境中基本半导体器件的寿命,可靠性和运行性能,这有助于减少测量中的致命事故并计划核设施中的预防措施。它还将支持增强用于核设施的电子设备。实验中使用的基本半导体器件是二极管(1n4007),齐纳二极管(5.1v),发光二极管,晶体管(BC547、2n3904),电压控制IC(7805),运算放大器(LM741)和光耦合器(4n35)。选择设备时要牢记它们在发送设备中的应用(用于ITER印度测试毯系统的温度变送器,压力变送器,流量变送器,监控器和控制器。这种设备也用于一般的核电子学中。这些设备已经在Am-Be中子源环境中进行了辐照。最高通量已达到10 11  n / cm 2。中子源的能量范围从低到高。所有半导体器件在辐照之前和之后均已表征。在二极管IV特性中观察到5-10%的偏差,而晶体管在基本功能方面显示出更高的挠度。光耦合器的基本特性偏差超过50%,而电压控制IC在10 11 n / cm 2的辐射后甚至无法工作。本文描述了实验的细节以及辐照后半导体器件的行为。该实验支持印度测试毯系统仪器的选择和进一步研究。
更新日期:2021-01-12
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