In the present work, we have designed a symmetric supercapacitor (SS) device by synthesizing a pseudocapacitive binder-free cobalt oxide (Co₃O₄) thin film based electrode using reactive DC magnetron sputtering technique. The thin film electrodes were characterized by x-ray diffraction, Raman spectroscopy and x-ray photoelectron spectroscopy to reveal the crystallographic details, stoichiometry, and electronic configuration, respectively. Furthermore, Co₃O₄ thin film electrode is used for pseudocapacitor and electrochemically tested in 1M aqueous KOH electrolyte solution, in addition, a symmetric supercapacitor (SS) device was fabricated. It was found that the SS device exhibits tremendous electrochemical stability in terms of high capacitance and good cycling stability. The value of specific capacitance for Co₃O₄ thin film electrodes and the SS device was calculated to be 392 Fg⁻¹ and 95 Fg⁻¹, respectively, at a scan rate of 2 mAcm⁻². The SS device exhibits high specific energy (29 W-hkg⁻¹) along with comparable good specific power (4745 Wkg⁻¹). In this work, the fabricated SS device demonstrates 91.40% cyclic and capacitance retention at 8 mAcm⁻² beyond 10 000 cycles. The excellent electrochemical stability and capacitive performance of the SS device suggest that it would be an ideal and potential candidate for energy storage applications in the future.

在目前的工作中，我们通过使用反应性直流磁控溅射技术合成赝电容性无粘合剂氧化钴 (Co ₃ O ₄ ) 薄膜电极，设计了对称超级电容器 (SS) 装置。薄膜电极通过 X 射线衍射、拉曼光谱和 X 射线光电子能谱进行表征，以分别揭示晶体学细节、化学计量学和电子构型。此外，Co ₃ O ₄薄膜电极用于赝电容器，并在 1M KOH 水溶液中进行电化学测试，此外，还制作了对称超级电容器 (SS) 装置。发现 SS 器件在高电容和良好的循环稳定性方面表现出巨大的电化学稳定性。Co ₃ O ₄薄膜电极和SS器件的比电容值在2 mAcm ^-2的扫描速率下计算分别为392 Fg ^-1和95 Fg ^-1。SS 装置表现出高比能量 (29 W-hkg ^-1 ) 以及相当好的比功率 (4745 Wkg ^-1）。在这项工作中，制造的 SS 器件在 8 mAcm ^{-2 下}表现出 91.40% 的循环和电容保持率超过 10 000 次循环。SS 器件优异的电化学稳定性和电容性能表明它将成为未来储能应用的理想和潜在候选者。