当前位置: X-MOL 学术Adv. Electron. Mater. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Regulate the Electron Mobility and Threshold Voltage of P(NDI2OD‐T2)‐Based Organic Field‐Effect Transistors by the Compatibility Principle
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2021-01-12 , DOI: 10.1002/aelm.202000939
Hau‐Ren Yang, Yu‐Ying Lai

Blending has been used extensively to meet the requirements for high‐mobility organic field‐effect transistors (OFETs), involving various combinations of (non‐)conjugated polymers and (non‐)conjugated molecules. Nonetheless, the collaborative effects of conjugated polymer and its structurally analogous molecule on charge‐transport properties have rarely been reported. In this work, P(NDI2OD‐T2) and N,N′‐bisbutyl‐2,6‐bis([2,2′]bithiophenyl‐5‐yl)‐1,4,5,8‐naphthalene diimide (M), are synthesized and blended with each other. M is designed to resemble the monomeric unit of P(NDI2OD‐T2) on the basis of the premise that structural similarity would promote their compatibility in the blends. This compatibility preserves electronic coupling through intermolecular interaction and establishes charge‐transport pathways as well. Overall, the thin‐film morphology of the blends could be prudently regulated through controlling the blending fraction, resulting in raising electron mobility up to ≈0.3 cm2 V−1 s−1. More importantly, this approach reduces threshold voltage by 50%, originating from lowering the injection barrier. These findings are well rationalized and the promising capabilities of the compatibility principle in OFETs are strongly supported.

中文翻译:

通过相容原理调节基于P(NDI2OD-T2)的有机场效应晶体管的电子迁移率和阈值电压

共混已被广泛用于满足高迁移率有机场效应晶体管(OFET)的要求,涉及(非)共轭聚合物和(非)共轭分子的各种组合。尽管如此,共轭聚合物及其结构类似分子对电荷传输性质的协同作用却鲜有报道。在这项工作中,P(NDI2OD-T2)和NN合成了'-双丁基-2,6-双([2,2']联硫代苯基-5-基)-1,4,5,8-萘二酰亚胺(M),并将其相互混合。M被设计为类似于P(NDI2OD-T2)的单体单元,前提是结构相似性将促进它们在共混物中的相容性。这种相容性通过分子间相互作用保留了电子耦合,并建立了电荷传输途径。总体而言,可以通过控制共混比例来谨慎调节共混物的薄膜形态,从而将电子迁移率提高至≈0.3cm 2 V -1 s -1。更重要的是,这种方法源自降低注入势垒,从而将阈值电压降低了50%。这些发现是合理的,并且大力支持兼容性原则在OFET中的潜力。
更新日期:2021-02-15
down
wechat
bug