In this paper, we have successfully controlled the thermoelectric properties of copper nitride (Cu₃N) thin films by optimizing the post growth nitrogen gas flow time. During thermal evaporation growth of Cu₃N thin films, pure copper power (0.12 g) was evaporated on soda lime glass substrate. The boat temperature and nitrogen gas flow rate were fixed at 1010 °C and 100 sccm respectively in horizontal glass tube furnace. In order to study the annealing time duration, all samples were annealed at 320 °C in tube furnace for 2–8 h with constant flow rate of 100 sccm. The formation of Cu₃N phase was confirmed by X-Ray Diffraction (XRD) and it was found that crystallinity of grown thin films was improved with annealing time duration. The Seebeck data demonstrated that the value of Seebeck coefficient was increased form 87.59 μV/^°C to 134.79 μV/^°C as the annealing time duration was increased from 2 to 8 h. This improvement in Seebeck coefficient was associated with the enhancement of samples crystallinity which ultimately increase the mobility of charge carriers. The value of electrical conductivity was also increased from 26.04 S/cm to 33.49 S/cm, therefore we were able to achieve the highest value of power factor (6.08 × 10⁻⁵ Wm⁻¹C⁻²) for sample annealed for maximum time duration. Raman spectroscopy and SEM measurements were additionally performed to strengthen our proposed argument.

通过优化后生长氮气的流动时间，我们成功地控制了氮化铜（Cu ₃ N）薄膜的热电性能。在Cu ₃ N薄膜的热蒸发生长过程中，纯铜粉（0.12 g）在钠钙玻璃基板上蒸发。在卧式玻璃管炉中，舟皿温度和氮气流速分别固定为1010°C和100 sccm。为了研究退火时间，将所有样品在320℃的管式炉中以100 sccm的恒定流速退火2-8 h。Cu ₃的形成通过X射线衍射（XRD）证实了N相，并且发现随着退火时间的延长，生长的薄膜的结晶度得到改善。Seebeck数据表明，随着退火时间从2 h增加到8 h ，Seebeck系数的值从87.59μV / ^° C增加到134.79μV/ ^° C。Seebeck系数的这种提高与样品结晶度的提高有关，这最终增加了电荷载流子的迁移率。电导率值也从26.04 S / cm增加到33.49 S / cm，因此我们能够获得最高的功率因数值（6.08×10 ^-5 Wm ^-1 C ^-2），以使样品退火时间最长。此外，还进行了拉曼光谱和SEM测量，以加强我们提出的论点。