当前位置: X-MOL 学术Semiconductors › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Geometrical Effects on Exchange Coupling in System of Near-Surface Donors and Quantum Dots
Semiconductors ( IF 0.7 ) Pub Date : 2021-01-04 , DOI: 10.1134/s1063782620140171
E. A. Levchuk , L. F. Makarenko

Abstract

The value of exchange energy for near-surface double-donor and double-quantum dot structures under the effect of external electric field has been calculated using unrestricted Hartree–Fock method. The dependences of exchange energy on geometric parameters have been obtained. It has been found that the location of donor centers near the surface of the semiconductor leads to an increase in the exchange energy. Approximate formulas for the dependence of the exchange energy on the distance between the centers of quantum dots are suggested. It has been shown that exchange coupling control is less sensitive to electric field as compared to magnetic field, and electron density relocation at large electric fields should be taken into account when designing devices based on the structures under study.



中文翻译:

近表面供体和量子点系统中交换耦合的几何效应

摘要

使用无限制Hartree-Fock方法计算了在外电场作用下近表面双供体和双量子点结构的交换能量值。已经获得了交换能量对几何参数的依赖性。已经发现,施主中心在半导体表面附近的位置导致交换能量的增加。提出了交换能量对量子点中心之间距离的依赖性的近似公式。已经表明,与磁场相比,交换耦合控制对电场的敏感度较低,在基于所研究结构设计器件时,应考虑大电场下的电子密度重定位。

更新日期:2021-01-11
down
wechat
bug