Gallium oxide (Ga₂O₃) is a natural candidate material for next-generation solar-blind photodetectors (PDs). At present, it remains challenging to tune a balanced performance with high responsivity and fast response speed for the metal-semiconductor-metal (MSM) PDs due to the specific internal gain and persistent photoconductivity (PPC) effect. Herein, a series of amorphous and β-phase Ga₂O₃ films with ultra-high transmittance (>95%) in the near ultraviolet–visible region are obtained by combing with magnetron sputtering and post-annealing. Then, we fabricated MSM solar-blind photodetectors based on amorphous and β-phase Ga₂O₃ films with different post-annealing temperatures. The results show that the amorphous Ga₂O₃ PD has higher responsivity (R), detectivity (D*) and external quantum efficiency (EQE), but its response speed is slow, and photo-to-dark current ratio (PDCR) and rejection ratio (R₂₅₄/R₃₆₅) are relatively low. In contrast, the devices fabricated based on high temperature annealed β-Ga₂O₃ films display faster response speed, higher PDCR and R₂₅₄/R₃₆₅, but lower R, D* and EQE. It is demonstrated that oxygen vacancies dominate the internal gain and PPC of the device, the concentration of which in turn determines the performance of the device. A β-Ga₂O₃ photodetector presented more balanced performance is obtained by properly controlling the concentration of oxygen vacancies.

氧化镓（Ga ₂ O ₃）是下一代太阳盲光电探测器（PD）的天然候选材料。目前，由于特定的内部增益和持久的光电导（PPC）效应，要为金属-半导体-金属（MSM）PD调整具有高响应性和快速响应速度的平衡性能仍然具有挑战性。在此，通过结合磁控溅射和后退火处理，获得了一系列在近紫外可见光区域具有超高透射率（> 95％）的非晶态和β相的Ga ₂ O ₃薄膜。然后，我们制造了基于非晶相和β相Ga ₂ O _3的MSM太阳盲光电探测器。退火后温度不同的薄膜。结果表明，非晶Ga ₂ O ₃ PD具有较高的响应度（R），检测度（D *）和外部量子效率（EQE），但其响应速度较慢，且光暗电流比（PDCR）和拒绝率（R ₂₅₄ / R ₃₆₅）相对较低。与此相反，器件制造的基于高温退火的β-Ga _2层ö ₃薄膜显示更快的响应速度，更高PDCR和R ₂₅₄ / R ₃₆₅，但降低R，D *和EQE。事实证明，氧空位在器件的内部增益和PPC中占主导地位，其浓度反过来又决定了器件的性能。甲的β-Ga ₂ ö ₃光检测器呈现更平衡的性能是通过适当地控制氧空位的浓度获得的。