Single Event Transients (SET’s) occur in analog integrated circuits due to the strike of a heavy-ion (or) heavy energy proton at the transistor junction. It produces electron–hole pairs, which propagates in the circuit and results in amplitude variation, phase displacement at the output voltage. This paper presents a Radiation Hardened By Design (RHBD) current starved inverter buffer Voltage Control Oscillator (VCO) for the application of Phase Locked Loop (PLL). The proposed VCO is composed of current starved inverter delay VCO and majority voter. The current starved inverter delay VCO is designed with the inverter delay cell, and a single current source is shared for each delay cell. The majority voter is designed by Gate Diffusion Input (GDI) logic to reduce power consumption. The Linear Energy Transfer (LET) ranging from 14.47 to 100 $\text{Mev}-{\text{cm}}^2∕\text{mg}$ is applied at the nodes of VCO. The proposed mitigation technique reduces the SET effect by 98%, and it operates at the frequency range from 0.5 GHz to 2.5 GHz with the power consumption of 290 $\mathrm{\mu }$W.

单重瞬变（SET）发生在模拟集成电路中，原因是晶体管结处的重离子（或）重能量质子受到撞击。它产生电子-空穴对，该电子-空穴对在电路中传播并导致振幅变化和输出电压下的相移。本文针对锁相环（PLL）的应用，提出了一种辐射强化（RHBD）电流不足的逆变器缓冲器电压控制振荡器（VCO）。提议的VCO由电流不足的逆变器延迟VCO和多数表决器组成。电流不足的逆变器延迟VCO与逆变器延迟单元一起设计，并且每个延迟单元共享一个电流源。多数表决器由门扩散输入（GDI）逻辑设计，以降低功耗。线性能量转移（LET）范围为14.47至100$\text{梅夫}-{\text{厘米}}^2∕\text{毫克}$在VCO的节点上应用。拟议的缓解技术可将SET效应降低98％，并且其工作频率范围为0.5 GHz至2.5 GHz，功耗为290$\mathrm{\mu }$W.