The electron-ion coupling in iontronics has great significance and potential for energy conversion and storage devices. However, it is a substantial challenge to integrate iontronics into all-solid-state semiconductor circuits and explore the electron-ion coupling in semiconductor devices. Here, by utilizing the organic-inorganic halide perovskite, we fabricate a planar heterojunction with a gradient distribution of halide anions. The diode-like halide migration was investigated by bias voltage induced asymmetric blue shift in photoluminescence spectrum. This pseudo-ionic diode behaviour was found to result from asymmetric charge injection characterized by I–V curves and gradient-halides-induced vacancy hopping indicated by energy dispersive spectroscopy (EDS). The planar gradient perovskite heterojunction provides a viable route for extending iontronic devices into the regime of all-solid-state semiconductors.

离子电子学中的电子-离子耦合对于能量转换和存储设备具有重要的意义和潜力。然而，将离子电子集成到全固态半导体电路中并探索半导体器件中的电子-离子耦合是一个巨大的挑战。在这里，通过利用有机-无机卤化物钙钛矿，我们制造了具有卤化物阴离子梯度分布的平面异质结。通过偏压在光致发光光谱中引起的不对称蓝移研究了二极管状卤化物的迁移。发现这种伪离子二极管的行为是由以IV为特征的不对称电荷注入引起的能量色散谱（EDS）表示的卤化物曲线和梯度卤化物引起的空位跳跃。平面梯度钙钛矿异质结为将离子电子器件扩展到全固态半导体领域提供了一条可行的途径。