In this article, two types of substrate-integrated defected ground structure (SIDGS) resonant cells with wide upper stopband and low radiation loss are presented for filter implementation. Such SIDGS resonant cells are composed of two dissimilar DGSs surrounded by the bottom ground and metal-vias, which cannot only introduce wide stopband with low radiation loss but also be flexible for integration. Based on the aforementioned SIDGS resonant cells, single- and dual-band bandpass filters (BPFs) are designed and fabricated. The single-band BPF centered at 2.40 GHz exhibits an ultrawide upper stopband up to 19.7 GHz with a rejection level of 31 dB, whereas the measured stopband total loss (i.e., including radiation, metal, and substrate loss) remains about 30% up to 19.3 GHz. The dual-band BPF operated at 2.10 and 3.78 GHz exhibits an ultrawide upper stopband up to 17.8 GHz with a rejection level of 23 dB, whereas the measured stopband total loss is less than 16% up to 11.4 GHz.

中文翻译：

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用于具有宽阻带和低辐射损耗的单带和双带带通滤波器的基板集成缺陷接地结构

在本文中，介绍了两种具有宽上阻带和低辐射损耗的基板集成缺陷接地结构 (SIDGS) 谐振单元，用于滤波器实现。这种 SIDGS 谐振单元由底部接地和金属通孔包围的两个不同的 DGS 组成，不仅可以引入低辐射损耗的宽阻带，而且可以灵活集成。基于上述 SIDGS 谐振单元，设计和制造了单带和双带带通滤波器 (BPF)。以 2.40 GHz 为中心的单频段 BPF 具有高达 19.7 GHz 的超宽上阻带和 31 dB 的抑制水平，而测得的阻带总损耗（即，包括辐射、金属和基板损耗）保持约 30% 至19.3 GHz。双频 BPF 在 2.10 和 3 下运行。