Gallium nitride (GaN) is one of the most important semiconductor materials in modern electronics. While GaN films are routinely deposited by chemical vapor deposition at around 1000 °C, low-temperature routes for GaN deposition need to be better understood. Herein, we present an atomic layer deposition (ALD) process for GaN-based on triethyl gallium (TEG) and ammonia plasma and show that the process can be improved by adding a reactive pulse, a “B-pulse” between the TEG and ammonia plasma, making it an ABC-type pulsed process. We show that the material quality of the deposited GaN is not affected by the B-pulse, but that the film growth per ALD cycle increases when a B-pulse is added. We suggest that this can be explained by the removal of ethyl ligands from the surface by the B-pulse, enabling a more efficient nitridation by the ammonia plasma. We show that the B-pulsing can be used to enable GaN deposition with a thermal ammonia pulse, albeit of x-ray amorphous films.

中文翻译：

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使用三乙基镓的GaN原子层沉积中的表面配体去除

氮化镓（GaN）是现代电子产品中最重要的半导体材料之一。尽管通常在约1000°C下通过化学气相沉积法沉积GaN膜，但需要更好地理解GaN沉积的低温路线。本文中，我们介绍了基于三乙基镓（TEG）和氨等离子体的GaN基原子层沉积（ALD）工艺，并表明可以通过在TEG和氨之间添加反应性脉冲，“ B脉冲”来改进该工艺等离子体，使其成为ABC型脉冲过程。我们表明，沉积的GaN的材料质量不受B脉冲的影响，但是当添加B脉冲时，每个ALD循环的膜生长增加。我们建议，这可以解释为通过B脉冲从表面除去乙基配体，从而使氨等离子体能够更有效地进行氮化。