Plasma-enhanced chemical vapor deposition of silicon from a SiF₄/H₂/Ar gas mixture is observed on a SiO_xN_y surface, while under the same plasma conditions, silicon films do not grow on AlO_x or on Al surfaces. Transmission electron microscopy confirms that the silicon deposited on SiO_xN_y has a microcrystalline structure. After the plasma process, fluorine is detected in abundance on the AlO_x surface by x-ray photoelectron spectroscopy and energy dispersive x-ray chemical analyses. This suggests that Al–F bonds are formed on this surface, blocking any deposition of silicon on it. In situ ellipsometry studies show that deposition can be initiated on AlO_x surfaces by increasing the temperature of the electrodes or increasing the RF plasma power, leading to a loss of selectivity.

中文翻译：

---

区域选择性等离子体增强微晶硅化学气相沉积的起源

在SiO _x N _y表面上观察到了从SiF ₄ / H ₂ / Ar气体混合物中硅的等离子体化学气相沉积，而在相同的等离子体条件下，硅膜不在AlO _x或Al表面上生长。透射电子显微镜证实，沉积在SiO _x N _y上的硅具有微晶结构。在等离子体处理之后，通过X射线光电子能谱和能量色散X射线化学分析在AlO _x表面上大量检测到氟。这表明在该表面上形成了Al–F键，从而阻止了硅在该表面上的任何沉积。原位椭圆光度法研究表明，可以通过提高电极温度或提高RF等离子功率在AlO _x表面上开始沉积，从而导致选择性损失。