Three-dimensional nanodevice architectures require the coating and filling of deep vias and trenches, leading to an ongoing demand for dry processes with step coverages equal to or greater than one. We describe a new superconformal chemical vapor deposition process based on the use of two precursors: The first precursor readily deposits to afford film growth, but it cannot fill trenches when used alone because the coating is subconformal. The second precursor inhibits the deposition rate of the first precursor, and it grows film relatively slowly so that the overall film growth rate decreases when both precursors are present. In a trench, the inhibitor significantly suppresses the growth rate at the trench opening, but its pressure declines with depth due to consumption (film growth on the sidewalls) and the suppression effect weakens. Near the opening of the trench, where the inhibitor pressure is high, the consumption rate of the first precursor is small; it, therefore, diffuses deep into the trench to afford a growth rate that increases toward the bottom. If the flux of the inhibitor is not too high and the uninhibited growth rate of the first precursor is larger than that of the inhibitor, then the resulting film will be superconformal. We demonstrate this superconformal process for the growth of a metallic ceramic alloy, Hf_1−xV_xB_y, in which the vanadium-bearing precursor serves as the consumable inhibitor. A continuous, single-step process is used to fill trenches with aspect ratios up to 10 with no void or seam along the centerline. We develop a model that captures the trench filling kinetics using Langmuirian growth kinetics, in which the two precursors compete for available adsorption sites and have different reaction rates. Calculations using physically plausible model parameters agree well with measured results and can be used to predict filling as a function of the aspect ratio. The model also indicates why filling fails at very high aspect ratios. In principle, a superconformal film of constant composition could be obtained using two precursors that each afford the same material.

中文翻译：

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Hf1-xVxBy化学气相沉积中使用可消耗抑制剂的超共形生长和沟槽填充

三维纳米器件体系结构需要涂覆和填充深的通孔和沟槽，从而导致对干法工艺的持续需求，其阶梯覆盖率等于或大于一。我们基于两种前驱物的使用描述了一种新的超保形化学气相沉积工艺：第一个前驱物易于沉积以提供膜生长，但由于涂层是次保形的，因此无法单独填充沟槽。第二前体抑制了第一前体的沉积速率，并且它相对较慢地生长膜，使得当两种前体同时存在时，总的膜生长速率降低。在沟槽中，抑制剂可显着抑制沟槽开口处的生长速率，但由于消耗（侧壁上的薄膜生长），其压力会随着深度的增加而下降，抑制作用减弱。在抑制器压力高的沟槽的开口附近，第一前体的消耗率小。因此，它扩散到沟槽深处，以提供向底部增加的增长率。如果抑制剂的通量不太高并且第一前体的未抑制生长速率大于抑制剂的生长速率，则所得膜将是超保形的。我们证明了金属陶瓷合金Hf生长的超保形过程 那么所得的薄膜将是超保形的。我们证明了金属陶瓷合金Hf生长的超保形过程 那么所得的薄膜将是超保形的。我们证明了金属陶瓷合金Hf生长的超保形过程_1-x V _x B _y，其中含钒前体用作消耗性抑制剂。使用连续的单步过程填充纵横比最高为10的沟槽，沿中心线没有空隙或接缝。我们开发了一个使用Langmuirian生长动力学来捕获沟槽填充动力学的模型，其中两种前体竞争可用的吸附位点，并且具有不同的反应速率。使用物理上合理的模型参数进行的计算与测得的结果非常吻合，并且可以根据宽高比来预测填充。该模型还说明了为什么填充比例很高时会失败。原则上，可以使用两种均提供相同材料的前体获得恒定组成的超保形膜。